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| 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 Discrete POWER & Signal Technologies 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 G D G S TO-92 D SOT-23 Mark: 6B / 6M / 6H S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5484 350 2.8 125 357 Max *MMBF5484 225 1.8 556 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." a 1997 Fairchild Semiconductor Corporation 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 N-Channel RF Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = - 1.0 A, VDS = 0 VGS = - 20 V, VDS = 0 VGS = - 20 V, VDS = 0, TA = 100C VDS = 15 V, ID = 10 nA 2N5484 2N5485 2N5486 - 25 - 1.0 - 0.2 - 3.0 - 4.0 - 6.0 V nA A V V V - 0.3 - 0.5 - 2.0 ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N5484 2N5485 2N5486 1.0 4.0 8.0 5.0 10 20 mA mA mA SMALL SIGNAL CHARACTERISTICS gfs Forward Transfer Conductance VDS = 15, VGS = 0, f = 1.0 kHz 2N5484 2N5485 2N5486 VDS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 / 2N5486 VDS = 15, VGS = 0, f = 1.0 kHz 2N5484 2N5485 2N5486 VDS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 / 2N5486 VDS = 15, VGS = 0, f = 100 MHz 2N5484 VDS = 15, VGS = 0, f = 400 MHz 2N5485 2N5486 VDS = 15, VGS = 0, f = 1.0 MHz VDS = 15, VGS = 0, f = 1.0 MHz VDS = 15, VGS = 0, f = 1.0 MHz VDS= 15 V, RG = 1.0 k, f = 100 MHz 2N5484 VDS= 15 V, RG = 1.0 k, f = 400 MHz 2N5484 VDS= 15 V , RG = 1.0 k, f = 100 MHz 2N5485 / 2N5486 VDS= 15 V, RG = 1.0 k, f = 400 MHz 2N5485 / 2N5486 3000 3500 4000 6000 7000 8000 100 1000 50 60 75 75 100 2500 3000 3500 5.0 1.0 2.0 3.0 4.0 2.0 4.0 mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos mhos pF pF pF dB dB dB dB Re(yis) Input Conductance gos Output Conductance Re(yos) Output Conductance Re(yfs) Forward Transconductance Ciss Crss Coss NF Input Capacitance Reverse Transfer Capacitance Output Capacitance Noise Figure *Pulse Test: Pulse Width 300 ms, Duty Cycle 2% 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 N-Channel RF Amplifier (continued) Typical Characteristics Transfer Characteristics 20 Channel Resistance vs Temperature 1000 r DS - DRAIN ON RESISTANCE ( ) 500 300 200 100 V GS(OFF) = -4.5V TA = -55 C T A = +25 C O O V DS = 15V ID - DRAIN CURRENT (mA) 16 V GS(OFF) = -1.0V -2.5 V -5.0V -8.0 V 12 T A = +125O C TA = -55 C T A = +25 C T A = +125O C O O 8 50 30 20 10 4 V DS = 100mV V -50 GS -2.5 V 0 0 -1 -2 -3 -4 VGS- GATE-SOURCE VOLTAGE(V) -5 =0V 150 0 50 100 T A - AMBIENT TEMPERATURE (C) Transconductance Characteristics gfs -- TRANSCONDUCTANCE (mmhos) 7 6 5 4 3 2 1 0 0 Common Drain-Source Characteristics I D -- DRAIN CURRENT (mA) DS TA = -55 C T A = +25 C T A = +125O C O O V = 15V 5 4 TYP V 3 T A = +25 C GS(OFF) O = -5.0V = 0V 5V .0V -0. -1 V -1.5 -2.0V -2.5V TA = -55 C T A = +25 C T A = +125O C V GS(OFF) = -4.5V O O V GS 2 1 -3.0V -3.5V -4.0V -2.5 V -1 -2 -3 -4 VGS- GATE-SOURCE VOLTAGE(V) -5 0 0 0.2 0.4 0.6 0.8 VDS - DRAIN-SOURCE VOLTAGE(V) 1 gos -- OUTPUT CONDUCTANCE (u mhos) T A = +25 C f = 1.0 kHz 20 10 5 O V GS(OFF) = -5.5V 5.0V 10V 15V 20V gfs, I DSS @ V DS = 15 V, V r DS @ VDS= 100mV, V GS = 0 PULSE GS = 0 100 50 30 20 10 5 V DG = 5v 10 20 15 5 10 15 20 V GS(OFF) 1 0.5 = -3.5V V 0.1 0.01 0.02 GS(OFF) = -1.5V 5 10 20 10 -1 VGS(OFF) @ VGS = 15V, I D= 1nA -2 -3 -5 -7 V - GATE-SOURCE VOLTAGE(V) GS 3 2 1 - 10 0.05 0.1 0.2 0.5 1 2 I D -- DRAIN CURRENT (mA) gfs --- TRANSCONDUCTANCE ( mmhos ) I -- DRAIN CURRENT ( mA ) DSS Output Conductance vs Drain Current r DS -- DRAIN "ON" RESISTANCE ( ) Transconductance Parameter Interactions 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 N-Channel RF Amplifier (continued) Typical Characteristics (continued) Transconductance vs Drain Current gfs -- TRANSCONDUCTANCE (mmhos) 10 Noise Voltage vs Frequency V DG = 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2 f @ f > 1.0 kHz Hz ) T A = +25 C T A = +125 O C 1 0.5 O TA = -55 C T A = +25 C V GS GS(OFF) = - 5V T A = +125 O C V DG O O e n- NOISE VOLTAGE ( nV/ V GS GS(OFF) = - 1.5V O TA = -55 C 5 10 5 I D = 0.5 mA I D = 3 mA = 15V 5 10 0.1 0.01 0.02 f = 1.0 kHz 0.05 0.1 0.2 0.5 1 2 I - DRAIN CURRENT (mA) D 1 0.01 0.03 0.1 0.3 1 3 10 f -- FREQUENCY (kHz) 30 100 Capacitance vs Voltage 10 5 Noise Figure Frequency V DS NF -- NOISE FIGURE (dB) 4 f = 0.1 - 1.0 MHz ) -- CAPACITANCE (pF) 5 = 15V = 5.0 mA I D C isC V (DS = 15 V) V) ( V = 15 1 3 R g = 1.0 k O T A = +25 C C rs ( V DS = 0 V) 2 C is ( C rs 1 0 -5 -10 -15 VGS-- GATE-SOURCE VOLTAGE(V) -20 0 10 20 30 50 100 200 300 f -- FREQUENCY (MHz) 500 1000 Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 SOT-23 TO-92 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 N-Channel RF Amplifier (continued) Common Source Characteristics Input Admittance Yiss -- INPUT ADMITTANCE (mmhos) 10 5 V DS = 15V V GS = 0 (CS) -- OUTPUT CONDUCTANCE (mmhos) 1 Output Admittance b OSS (x 10) g OSS 1 b iss g iss V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 Forward Transadmittance Yfss -- FORWARD TRANSFER (mmhos) Y rss-- REVERSE TRANSFER (mmhos) Y OSS Reverse Transadmittance 10 5 10 5 +g fss -b fss 1 - b rss 1 -g V DS = 15V V GS = 0 (CS) 100 rss ( X 0.1) V DS = 15V V GS = 0 (CS) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 200 300 500 f -- FREQUENCY (MHz) 700 1000 2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486 N-Channel RF Amplifier (continued) Common Gate Characteristics Input Admittance Y ogs-- OUTPUT CONDUCTANCE (mmhos) Y -- INPUT ADMITTANCE (mmhos) igs 1 Output Admittance V DS = 15V V GS = 0 (CG) b OgS (x 10) g Ogs 10 5 g igs b igs V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 1 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 Forward Transadmittance Y rgs-- REVERSE TRANSFER (mmhos) Yfgs -- FORWARD TRANSFER (mmhos) 10 5 Reverse Transadmittance 1 V DS = 15V V GS = 0 (CG) g rgs +g fgs -b fgs 1 - b rgs V DS = 15V V GS = 0 (CG) 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 100 200 300 500 f -- FREQUENCY (MHz) 700 1000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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